| PART |
Description |
Maker |
| HP4936DY FN4469 HP4936DYT |
5.8A, 30V, 0.037 Ohm, Dual N-Channel,Logic Level Power MOSFET(5.8A, 30V, 0.037 Ω,双N沟道,逻辑电平功率MOS场效应管) 5.8 A, 30 V, 0.037 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 5.8A I(D) | SO 5.8 A, 30 V, 0.037 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
5.8A/ 30V/ 0.037 Ohm/ Dual N-Channel/ Logic Level Power MOSFET
5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| RFT2P03LT |
2.1A, 30V, 0.150 Ohm, P-Channel Logic Level, Power MOSFET
|
Fairchild Semiconductor
|
| HUF76132S3S HUF76132P3 FN4553 76132P |
75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.011 Ω,N沟道,逻辑电平,UltraFET功率MOS场效应管)
Dual, Precision JFET High Speed Operational Amplifier; Package: SOIC; No of Pins: 8; Temperature Range: Industrial
75A 30V 0.011 Ohm N-Channel Logic Level UltraFET Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| STS8C5H30L S8C5H30L |
From old datasheet system
N-CHANNEL 30V -0.018 Ohm - 8A - P-CHANNEL 30V - 0.045 Ohm - 5A - SO-8 LOW GATE CHARGE STRIPFET III MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| S8C5H30L STS8C5H30L STS8C5H30L_07 STS8C5H30L07 |
N-channel 30V - 0.018 ohm - 8A/P-channel 30V - 0.045 ohm - 5A - SO-8 Low gate charge STripFET III MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| MTP29N15E |
TMOS POWER FET 29 AMPERES 150 VOLTS RDS(on) = 0.07 OHM 29 A, 150 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Motorola Mobility Holdings, Inc.
|
| STS4DPF30L |
DUAL P-CHANNEL 30V - 0.07 ohm - 4A SO-8 STripFET POWER MOSFET
Dual P-CHANNEL POWER MOSFET
DUAL P-CHANNEL 30V - 0.07 ohm - 4A SO-8 STripFET⑩ POWER MOSFET
DUAL P-CHANNEL 30V - 0.07 OHM - 4A SO-8 STRIPFET POWER MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| RFT3055 RFT3055LE HGTG20N120CND FN4537 |
2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET 2.0安培0V的，0.150 Ohm的N通道，逻辑层次，额定静电，功率MOSFET
2.0A/ 60V/ 0.150 Ohm/ N-Channel/ Logic Level/ ESD Rated/ Power MOSFET
63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
2.0A 60V 0.150 Ohm N-Channel Logic Level ESD Rated Power MOSFET
From old datasheet system
|
Fairchild Semiconductor, Corp.
INTERSIL[Intersil Corporation]
|
| RF1K49157 FN4012 |
6.3A, 30V, 0.030 Ohm, Single N-Channel LittleFETPower MOSFET
6.3A, 30V, 0.030 Ohm, Single N-Channel LittleFET Power MOSFET
From old datasheet system
6.3A, 30V, 0.030 Ohm, Single N-Channel LittleFET⑩ Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| MTD6N15 MTD6N15T4G |
Power Field Effect Transistor DPAK for Surface Mount(功率场效应晶体管) 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
Power MOSFET 150 V, 6 A, N-Channel DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| HUF76113T3ST FN4388 |
4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(4.7A, 30V, 0.031 Ω,N沟道,逻辑电平,UltraFET功率MOS场效应管)
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
|
